Транзистор: N-MOSFET; OptiMOSTM 5; полевой; 150В; 115А; Idm: 480А Технические параметры
- Case: PG-TO220-3
- Channel kind: enhanced
- Drain current: 115A
- Drain-source voltage: 150V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 5.1mΩ
- Polarisation: unipolar
- Power dissipation: 300W
- Pulsed drain current: 480A
- Technology: OptiMOS™ 5
- Type of transistor: N-MOSFET