Транзистор: N-MOSFET; StrongIRFET™; полевой; 100В; 136А; Idm: 690А Технические параметры
- Case: TO220AB
- Channel kind: enhanced
- Drain current: 136A
- Drain-source voltage: 100V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 4.2mΩ
- Polarisation: unipolar
- Power dissipation: 441W
- Pulsed drain current: 690A
- Technology: HEXFET®
- Type of transistor: N-MOSFET