Транзистор: P-MOSFET; полевой; -55В; -44А; Idm: -280А; 170Вт; D2PAK Технические параметры
- Case: D2PAK
- Channel kind: enhanced
- Drain current: -44A
- Drain-source voltage: -55V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 20mΩ
- Polarisation: unipolar
- Power dissipation: 170W
- Pulsed drain current: -280A
- Technology: HEXFET®
- Type of transistor: P-MOSFET