Транзистор: P-MOSFET; полевой; -55В; -8,5А; Idm: -48А; 45Вт; D2PAK Технические параметры
- Case: D2PAK
- Channel kind: enhanced
- Drain current: -8.5A
- Drain-source voltage: -55V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 175mΩ
- Polarisation: unipolar
- Power dissipation: 45W
- Pulsed drain current: -48A
- Technology: HEXFET®
- Type of transistor: P-MOSFET