Транзистор: P-MOSFET Технические параметры
- Case: DPAK
- Channel kind: enhanced
- Drain current: -5.6A
- Drain-source voltage: -60V
- Gate charge: 19нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: Vishay
- Mounting: SMD
- On-State Resistance: 280mΩ
- Polarisation: unipolar
- Power dissipation: 42W
- Pulsed drain current: -35A
- Type of transistor: P-MOSFET