Транзистор: N-MOSFET; полевой; 40В; 147А; Idm: 772А; 208Вт; TO262 Технические параметры
- Case: TO262
- Channel kind: enhanced
- Drain current: 147A
- Drain-source voltage: 40V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 2.5mΩ
- Polarisation: unipolar
- Power dissipation: 208W
- Pulsed drain current: 772A
- Technology: HEXFET®
- Type of transistor: N-MOSFET