Технические параметры
- Technology: HEXFET®
- Drain current: 50A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 60V
- Pulsed drain current: 280A
- Mounting: THT
- Case: IPAK
- Type of transistor: N-MOSFET
- On-State Resistance: 7.9mΩ
- Power dissipation: 99W