Транзистор: N-MOSFET; полевой; 60В; 50А; Idm: 280А; 99Вт; IPAK Технические параметры
- Case: IPAK
- Channel kind: enhanced
- Drain current: 50A
- Drain-source voltage: 60V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 7.9mΩ
- Polarisation: unipolar
- Power dissipation: 99W
- Pulsed drain current: 280A
- Technology: HEXFET®
- Type of transistor: N-MOSFET