Транзистор: N-MOSFET; полевой; 40В; 293А; Idm: 1707А; 375Вт; TO220 Технические параметры
- Case: TO220AB
- Channel kind: enhanced
- Drain current: 293A
- Drain-source voltage: 40V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 1.25mΩ
- Polarisation: unipolar
- Power dissipation: 375W
- Pulsed drain current: 1707A
- Technology: HEXFET®
- Type of transistor: N-MOSFET