Транзистор: N-MOSFET; полевой; 30В; 100А; Idm: 620А; 140Вт; TO-220AB Технические параметры
- Case: TO220AB
- Channel kind: enhanced
- Drain current: 100A
- Drain-source voltage: 30V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 3.5mΩ
- Polarisation: unipolar
- Power dissipation: 140W
- Pulsed drain current: 620A
- Technology: HEXFET®
- Type of transistor: N-MOSFET