Технические параметры
- Drain current: -3.6A
- Gate charge: 25nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: -60V
- Pulsed drain current: -30A
- Mounting: SMD
- Case: PowerPAK® 1212-8
- Type of transistor: P-MOSFET
- On-State Resistance: 65mΩ
- Power dissipation: 0.8W