Технические параметры
- Drain current: -50A
- Gate charge: 150nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: -40V
- Pulsed drain current: -100A
- Mounting: SMD
- Case: DPAK
- Type of transistor: P-MOSFET
- On-State Resistance: 17mΩ
- Power dissipation: 136W