Технические параметры
- Drain current: 3.98/-3.36A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 30/-30V
- Pulsed drain current: 22.9...-19.6A
- Features of semiconductor devices: N-MOSFET x2 + P-MOSFET x2
- Mounting: SMD
- Case: SO8
- Type of transistor: N/P-MOSFET
- On-State Resistance: 0.033Ω
- Power dissipation: 0.87W