Транзистор: N-MOSFET x2; полевой; 30В; 0,17А; Idm: 0,8А; 0,3Вт Технические параметры
- Case: SOT363
- Channel kind: enhanced
- Drain current: 0.17A
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±20V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 2.8Ω
- Polarisation: unipolar
- Power dissipation: 0.3W
- Pulsed drain current: 0.8A
- Type of transistor: N-MOSFET x2