Транзистор: P-MOSFET; полевой; -40В; -140А; Idm: -720А; 150Вт Технические параметры
- Case: PG-TO263-7
- Channel kind: enhanced
- Drain current: -140A
- Drain-source voltage: -40V
- Gate charge: 65нКл
- Gate-source voltage: -16...5V
- Kind of package: reel
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 2.4mΩ
- Polarisation: unipolar
- Power dissipation: 150W
- Pulsed drain current: -720A
- Technology: OptiMOS™ P2
- Type of transistor: P-MOSFET