Технические параметры
- Drain current: -40A
- Gate charge: 225nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±12V
- Drain-source voltage: -20V
- Pulsed drain current: -100A
- Mounting: SMD
- Case: PowerPAK® SO8
- Type of transistor: P-MOSFET
- On-State Resistance: 3.6mΩ
- Power dissipation: 36W