Технические параметры
- Drain current: -37A
- Gate charge: 48nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: -150V
- Pulsed drain current: 50A
- Mounting: SMD
- Case: PowerPAK® SO8
- Type of transistor: P-MOSFET
- On-State Resistance: 47.5mΩ
- Power dissipation: 66.6W