Технические параметры
- Drain current: 61.8A
- Gate charge: 205nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±30V
- Drain-source voltage: 600V
- Pulsed drain current: 247A
- Mounting: THT
- Case: TO247-3
- Type of transistor: N-MOSFET
- On-State Resistance: 36mΩ
- Power dissipation: 400W