Транзистор: P-MOSFET; полевой; -60В; -0,14А; 0,36Вт; PG-SOT23 Технические параметры
- Automotive Qualification Standard: AEC-Q101
- Case: PG-SOT23
- Continuous Drain Current (Id): 170mA
- Drain current: -0.14A
- Drain-source voltage: -60V
- Drain-Source Voltage (Vds): 60V
- Fall Time: 20.5ns
- Gate charge: 0.37нКл
- Gate-source voltage: ±20V
- Gate-Source Voltage: 20V
- Height Units: 3
- Kind of package: reel
- Manufacturer: Infineon
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- ON Resistance (Rds(on)): 8Ω
- On-State Resistance: 8Ω
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: SOT-23
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 0.36W
- Power Dissipation (Pd): 360mW
- Reflow Temperature Max.: 260°C
- Rise Time: 16.2ns
- Technology: SIPMOS™
- Transistor Polarity: P-Channel
- Turn-OFF Delay Time: 8.6ns
- Turn-ON Delay Time: 6.7ns
- Type of transistor: P-MOSFET