Технические параметры
- Technology: MDmesh™ V
- Drain current: 13A
- Gate charge: 64nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±25V
- Drain-source voltage: 710V
- Pulsed drain current: 88A
- Mounting: THT
- Case: TO220AB
- Type of transistor: N-MOSFET
- On-State Resistance: 139mΩ
- Power dissipation: 140W