Технические параметры
- Technology: MDmesh™ M6
- Drain current: 25A
- Gate charge: 57nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±25V
- Drain-source voltage: 600V
- Pulsed drain current: 140A
- Features of semiconductor devices: Kelvin terminal
- Mounting: THT
- Case: TO247-4
- Type of transistor: N-MOSFET
- On-State Resistance: 69mΩ
- Power dissipation: 250W