Технические параметры
- Drain current: 40A
- Gate charge: 106nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±25V
- Drain-source voltage: 600V
- Pulsed drain current: 252A
- Mounting: THT
- Case: TO247
- Type of transistor: N-MOSFET
- On-State Resistance: 41mΩ
- Power dissipation: 390W