Технические параметры
- Technology: MDmesh™ K5
- Drain current: 4A
- Gate charge: 11nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±30V
- Drain-source voltage: 900V
- Pulsed drain current: 24A
- Mounting: THT
- Case: TO247-3
- Type of transistor: N-MOSFET
- On-State Resistance: 1.1Ω
- Power dissipation: 110W