Транзистор: N-MOSFET; полевой; 650В; 7А; Idm: 66А; 32Вт; TO220FP Технические параметры
- Case: TO220FP
- Channel kind: enhanced
- Drain current: 7A
- Drain-source voltage: 650V
- Gate charge: 34нКл
- Gate-source voltage: ±20V
- Kind of package: tube
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 120mΩ
- Polarisation: unipolar
- Power dissipation: 32W
- Pulsed drain current: 66A
- Technology: CoolMOS™ C7
- Type of transistor: N-MOSFET