Транзистор: N-MOSFET; CoolMOS™ CFD7; полевой; 650В; 5А; Idm: 51А Технические параметры
- Case: TO220FP
- Channel kind: enhanced
- Drain current: 5A
- Drain-source voltage: 650V
- Gate charge: 28нКл
- Gate-source voltage: ±20V
- Kind of package: tube
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 170mΩ
- Polarisation: unipolar
- Power dissipation: 26W
- Pulsed drain current: 51A
- Technology: CoolMOS™ CFD7
- Type of transistor: N-MOSFET