Технические параметры
- Technology: TrenchFET®
- Drain current: -11.5A
- Gate charge: 190nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: 60V
- Pulsed drain current: -60A
- Mounting: SMD
- Case: PowerPAK® SO8
- Type of transistor: P-MOSFET
- On-State Resistance: 19mΩ
- Power dissipation: 3.4W