Технические параметры
- Drain current: 18A
- Gate charge: 130nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±30V
- Drain-source voltage: 650V
- Pulsed drain current: 676A
- Mounting: THT
- Case: TO220FP
- Type of transistor: N-MOSFET
- On-State Resistance: 125mΩ
- Power dissipation: 37W