Технические параметры
- Technology: TRENCH POWER LV
- Drain current: 6/-6A
- Gate charge: 7.1nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: 20/-20V
- Pulsed drain current: 19...-19A
- Mounting: SMD
- Case: DFN2020-6
- Type of transistor: N/P-MOSFET
- On-State Resistance: 25mΩ
- Power dissipation: 1.8/2.2W