Технические параметры
- Drain current: 15A
- Gate charge: 60.7nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: 100V
- Pulsed drain current: 15A
- Mounting: SMD
- Case: SOP8
- Type of transistor: N-MOSFET
- On-State Resistance: 12.5mΩ
- Power dissipation: 4W