Технические параметры
- Drain current: 6/-5A
- Gate charge: 5.2nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: 30/-30V
- Pulsed drain current: 24...-20A
- Mounting: SMD
- Case: SOP8
- Type of transistor: N/P-MOSFET
- On-State Resistance: 29mΩ
- Power dissipation: 2W