Транзистор: N-MOSFET; полевой; 650В; 11А; Idm: 53А; 26Вт; TO220FP Технические параметры
- Case: TO220FP
- Channel kind: enhanced
- Drain current: 11A
- Drain-source voltage: 650V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 25нКл
- Gate-source voltage: ±20V
- Kind of package: tube
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 180mΩ
- Polarisation: unipolar
- Power dissipation: 26W
- Pulsed drain current: 53A
- Technology: CoolMOS™ P7
- Type of transistor: N-MOSFET