Транзистор: N-MOSFET; Hi-PotMOS2; полевой; 280В; 26А; Idm: 104А Технические параметры
- Case: FTO-200AG (SC91)
- Channel kind: enhanced
- Drain current: 26A
- Drain-source voltage: 280V
- Gate charge: 24.5нКл
- Gate-source voltage: ±30V
- Kind of package: bulk
- Manufacturer: SHINDENGEN
- Mounting: THT
- On-State Resistance: 150mΩ
- Polarisation: unipolar
- Power dissipation: 90W
- Pulsed drain current: 104A
- Technology: Hi-PotMOS2
- Type of transistor: N-MOSFET