Технические параметры
- Technology: Hi-PotMOS2
- Drain current: 30A
- Gate charge: 70nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±30V
- Drain-source voltage: 600V
- Pulsed drain current: 120A
- Mounting: THT
- Case: MTO3PV (TO247AD)
- Type of transistor: N-MOSFET
- On-State Resistance: 230mΩ
- Power dissipation: 310W