Транзистор: N-MOSFET; EETMOS2; полевой; 60В; 34А; Idm: 136А; 35Вт Технические параметры
- Case: FTO-200AG (SC91)
- Channel kind: enhanced
- Drain current: 34A
- Drain-source voltage: 60V
- Gate charge: 41нКл
- Gate-source voltage: ±20V
- Kind of package: bulk
- Manufacturer: SHINDENGEN
- Mounting: THT
- On-State Resistance: 11mΩ
- Polarisation: unipolar
- Power dissipation: 35W
- Pulsed drain current: 136A
- Technology: EETMOS2
- Type of transistor: N-MOSFET