Транзистор: N-MOSFET; Hi-PotMOS2; полевой; 600В; 3А; Idm: 12А Технические параметры
- Case: FTO-200AG (SC91)
- Channel kind: enhanced
- Drain current: 3A
- Drain-source voltage: 600V
- Gate charge: 10нКл
- Gate-source voltage: ±30V
- Kind of package: bulk
- Manufacturer: SHINDENGEN
- Mounting: THT
- On-State Resistance: 2.3Ω
- Polarisation: unipolar
- Power dissipation: 52.5W
- Pulsed drain current: 12A
- Technology: Hi-PotMOS2
- Type of transistor: N-MOSFET