Технические параметры
- Technology: Hi-PotMOS2
- Drain current: 4A
- Gate charge: 12.5nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: bulk
- Gate-source voltage: ±30V
- Drain-source voltage: 600V
- Pulsed drain current: 16A
- Mounting: THT
- Case: FTO-200AG (SC91)
- Type of transistor: N-MOSFET
- On-State Resistance: 1.8Ω
- Power dissipation: 62.5W