Технические параметры
- Application: automotive industry
- Drain current: 4A
- Gate charge: 21nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: bulk
- Gate-source voltage: ±30V
- Drain-source voltage: 900V
- Pulsed drain current: 12A
- Mounting: THT
- Case: FTO-200AG (SC91)
- Type of transistor: N-MOSFET
- On-State Resistance: 3.4Ω
- Power dissipation: 79W