Транзистор: N-MOSFET; полевой; 900В; 4А; Idm: 12А; 79Вт Технические параметры
- Application: automotive industry
- Case: FTO-200AG (SC91)
- Channel kind: enhanced
- Drain current: 4A
- Drain-source voltage: 900V
- Gate charge: 21нКл
- Gate-source voltage: ±30V
- Kind of package: bulk
- Manufacturer: SHINDENGEN
- Mounting: THT
- On-State Resistance: 3.4Ω
- Polarisation: unipolar
- Power dissipation: 79W
- Pulsed drain current: 12A
- Type of transistor: N-MOSFET