Технические параметры
- Technology: EETMOS3
- Drain current: 50A
- Gate charge: 114nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: bulk
- Gate-source voltage: ±20V
- Drain-source voltage: 100V
- Pulsed drain current: 200A
- Mounting: THT
- Case: FTO-200AG (SC91)
- Type of transistor: N-MOSFET
- On-State Resistance: 8.7mΩ
- Power dissipation: 51W