Транзистор: N-MOSFET; EETMOS3; полевой; 60В; 86А; Idm: 344А; 58Вт Технические параметры
- Case: FTO-200AG (SC91)
- Channel kind: enhanced
- Drain current: 86A
- Drain-source voltage: 60V
- Gate charge: 181нКл
- Gate-source voltage: ±20V
- Kind of package: bulk
- Manufacturer: SHINDENGEN
- Mounting: THT
- On-State Resistance: 3mΩ
- Polarisation: unipolar
- Power dissipation: 58W
- Pulsed drain current: 344A
- Technology: EETMOS3
- Type of transistor: N-MOSFET