Технические параметры
- Technology: Hi-PotMOS2
- Drain current: 8A
- Gate charge: 9.8nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: bulk
- Gate-source voltage: ±30V
- Drain-source voltage: 280V
- Pulsed drain current: 32A
- Mounting: THT
- Case: FTO-200AG (SC91)
- Type of transistor: N-MOSFET
- On-State Resistance: 500mΩ
- Power dissipation: 52.5W