Транзистор: N-MOSFET x2; полевой; 30В; 6,6А; Idm: 60А; 1,42Вт; SO8 Технические параметры
- Application: automotive industry
- Case: SO8
- Channel kind: enhanced
- Drain current: 6.6A
- Drain-source voltage: 30V
- Gate-source voltage: ±25V
- Kind of package: tape
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 32.5mΩ
- Polarisation: unipolar
- Power dissipation: 1.42W
- Pulsed drain current: 60A
- Type of transistor: N-MOSFET x2