Транзистор: N-MOSFET x2; полевой; 60В; 4,1А; Idm: 30А; 0,8Вт; SO8 Технические параметры
- Application: automotive industry
- Case: SO8
- Channel kind: enhanced
- Drain current: 4.1A
- Drain-source voltage: 60V
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 55mΩ
- Polarisation: unipolar
- Power dissipation: 0.8W
- Pulsed drain current: 30A
- Type of transistor: N-MOSFET x2