Транзистор: N-MOSFET; EETMOS3; полевой; 120В; 40А; Idm: 160А; 51Вт Технические параметры
- Case: FTO-200AG (SC91)
- Channel kind: enhanced
- Drain current: 40A
- Drain-source voltage: 120V
- Gate charge: 117нКл
- Gate-source voltage: ±20V
- Kind of package: bulk
- Manufacturer: SHINDENGEN
- Mounting: THT
- On-State Resistance: 11.9mΩ
- Polarisation: unipolar
- Power dissipation: 51W
- Pulsed drain current: 160A
- Technology: EETMOS3
- Type of transistor: N-MOSFET