Транзистор: N-MOSFET; SiC; полевой; 1,2кВ; 5,5А; Idm: 20А; 50Вт Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 5.5A
- Drain-source voltage: 1.2kV
- Gate charge: 19нКл
- Gate-source voltage: -8...19V
- Manufacturer: Wolfspeed (Cree)
- Mounting: THT
- On-State Resistance: 525mΩ
- Polarisation: unipolar
- Power dissipation: 50W
- Pulsed drain current: 20A
- Technology: SiC
- Type of transistor: N-MOSFET