Транзистор: N-MOSFET; Hi-PotMOS2; полевой; 280В; 13А; Idm: 52А; 65Вт Технические параметры
- Case: FTO-200AG (SC91)
- Channel kind: enhanced
- Drain current: 13A
- Drain-source voltage: 280V
- Gate charge: 15нКл
- Gate-source voltage: ±30V
- Kind of package: bulk
- Manufacturer: SHINDENGEN
- Mounting: THT
- On-State Resistance: 300mΩ
- Polarisation: unipolar
- Power dissipation: 65W
- Pulsed drain current: 52A
- Technology: Hi-PotMOS2
- Type of transistor: N-MOSFET