Транзистор: P-MOSFET; TRENCH POWER MV; полевой; 20В; -10,4А; 3Вт Технические параметры
- Case: SOP8
- Channel kind: enhanced
- Drain current: -10.4A
- Drain-source voltage: 20V
- Gate charge: 72.8нКл
- Gate-source voltage: ±10V
- Kind of package: tape
- Manufacturer: YANGJIE TECHNOLOGY
- Mounting: SMD
- On-State Resistance: 26mΩ
- Polarisation: unipolar
- Power dissipation: 3W
- Pulsed drain current: -55A
- Technology: TRENCH POWER MV
- Type of transistor: P-MOSFET