Транзистор: P-MOSFET; полевой; -60В; -0,13А; Idm: -0,58А; 0,225Вт Технические параметры
- Case: SOT23
- Channel kind: enhanced
- Drain current: -0.13A
- Drain-source voltage: -60V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: MICRO COMMERCIAL COMPONENTS
- Mounting: SMD
- On-State Resistance: 7Ω
- Polarisation: unipolar
- Power dissipation: 0.225W
- Pulsed drain current: -0.58A
- Type of transistor: P-MOSFET