Транзистор: N-MOSFET x4; полевой; 60В; 8А; Idm: 50А; 22Вт; MLP12 Технические параметры
- Case: MLP12
- Channel kind: enhanced
- Drain current: 8A
- Drain-source voltage: 60V
- Features of semiconductor devices: MOSFET H-Bridge
- Gate charge: 33нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 17.5mΩ
- Polarisation: unipolar
- Power dissipation: 22W
- Pulsed drain current: 50A
- Type of transistor: N-MOSFET x4