Транзистор: P-MOSFET; полевой; -30В; -5А; Idm: -20А; 1,6Вт; SOT26 Технические параметры
- Case: SOT26
- Channel kind: enhanced
- Drain current: -5A
- Drain-source voltage: -30V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 10нКл
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 59mΩ
- Polarisation: unipolar
- Power dissipation: 1.6W
- Pulsed drain current: -20A
- Type of transistor: P-MOSFET