Транзистор: N-MOSFET x2; полевой; 35В; 4,5А; Idm: 30А; 1,5Вт; ECH8 Технические параметры
- Case: ECH8
- Channel kind: enhanced
- Drain current: 4.5A
- Drain-source voltage: 35V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 4.6нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 59mΩ
- Polarisation: unipolar
- Power dissipation: 1.5W
- Pulsed drain current: 30A
- Type of transistor: N-MOSFET x2