Транзистор: N-MOSFET x2; полевой; 24В; 11А; Idm: 60А; 1,4Вт; ECH8 Технические параметры
- Application: charging control
- Case: ECH8
- Channel kind: enhanced
- Drain current: 11A
- Drain-source voltage: 24V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 10нКл
- Gate-source voltage: ±12.5V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 9.1mΩ
- Polarisation: unipolar
- Power dissipation: 1.4W
- Pulsed drain current: 60A
- Semiconductor structure: common drain
- Type of transistor: N-MOSFET x2